BF256A
http://onsemi.com
3
f, FREQUENCY (MHz)
Figure 4. Input Admittance versus Frequency
g
is
, INPUT CONDUCTANCE (mmhos)
1000
0.01
10
100
10
0.1
1
Figure 5. Forward Transfer Admittance versus
Frequency
VDS
= 15 Vdc
VGS
= 0
Yis
= g
is
+ j
bis
0.1
1
10
100
bis
±gis
b
is
, INPUT SUSCEPTANCE (mmhos)
f, FREQUENCY (MHz)
g
fs
, FORWARD TRANSCONDUCTANCE (mmhos)
1000
0.1
100
100
10
1
10
VDS
= 15 Vdc
VGS
= 0
Yfs
= g
fs
± j
bfs
0.1
1
10
100
±bfs
gfs
±b
fs
, FORWARD SUSCEPTANCE (mmhos)
±VGS, GATE±SOURCE VOLTAGE (VOLTS)
C
iss
, INPUT CAPACITANCE (pF)
14 1023 5 7896
0
VDS
= 20 Vdc
f = 1 MHz
0
5
2
4
1
3
0
±VGS, GATE±SOURCE VOLTAGE (VOLTS)
C
rss
, REVERSE TRANSFER
CAPACITANCE (pF)
2846 10
0
1.0
0.5
f, FREQUENCY (MHz)
Figure 6. Reverse Transfer Admittance
versus Frequency
±g
rs
, REVERSE TRANSCONDUCTANCE (mmhos)
1000
0.001
1
100
10
0.01
0.1
Figure 7. Output Admittance versus
Frequency
VDS
= 15 Vdc
VGS
= 0
Yrs
= ±g
rs
± j
brs
0.01
0.1
1
10
±brs
±grs
±b
rs
, REVERSE SUSCEPTANCE (mmhos)
f, FREQUENCY (MHz)
g
os
, OUTPUT CONDUCTANCE (mmhos)
1000
0.001
1
100
10
0.01
0.1
VDS
= 15 Vdc
VGS
= 0
Yos
= g
os
+ j
bos
0.01
0.1
1
10
bos
gos
b
os
, OUTPUT SUSCEPTANCE (mmhos)
Figure 8. Input Capacitance versus
Gate±Source Voltage
Figure 9. Reverse Transfer Capacitance
versus Gate±Source Voltage
VDS
= 20 Vdc
f = 1 MHz
相关PDF资料
BF256C_J35Z IC AMP RF N-CH 30V 10MA TO-92
BLC6G22LS-75,112 FET RF LDMOS 28V 690MA SOT896B
BXA-12379 INVERTER 12V TRIPLE OUTPUT CCFL
BXA-12529/PS1 INVERTER POTTED 850V CCFL LAMP
BXA-12529 INVERTER 1000V FOR CCFL UV LAMP
BXA-12549-6M INVERTER DUAL DIMMING 12V INPUT
BXA-12553 INVERTER 700V FOR CCFL LAMP
BXA-12563 INVERTER DIMMING SGL OUTPUT CCFL
相关代理商/技术参数
BF256B 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256B_J35Z 功能描述:JFET JFET N-CHANNEL RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256B_Q 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C_J35Z 功能描述:JFET JFET N-CHANNEL RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF256C_Q 功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF257 功能描述:两极晶体管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
BF257CSM 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN